:? :?:? :?:::?:?:?:?:?:?:?:?: :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:? :w :w :?:::?:?:?:?:?:?:?:?::w :::?::w :?:?::?:?:o:?:?:w :?::?:?:o:?:w :?:?:o:?:?:?:?:?:?:e:w :?:?:w :?::?:::?:?:w :?:?:o:?:?:?:?:?:?:w :?:?:::?:?:?:w :?:?:?:w:?:?:?:w:?:?:?:?:w:o:?:?::?:?:?:w :w:w:w::?:o:?:?:?:?:?:? :w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w ::?:o:?:?:?:?:?:? b? :-:?::?:?:?:-:w :w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:-:?::?:?:?:?:- :w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w b? :?:?:?:?:?::-:?::?:?:?:-:? :w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w :?:?:?:?:?:?::-:?::?:?:?:?:-:?:w :w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w:w b? :?:?:::?:?:?:w:?:w:?:?:?? :?:?: :?? :?:?: :? :? :?:? @?:?:?:?:o:?:::o:?:?:w:?:?:?::?:o:?:?::::?::o::w:::?:o:?:? :?:?:?:?:?=? ::?::?:?:?:?:?: :a:e:?:1:?:? :?:?:?:?::?::?:?: :::?:? :?:e:?:? ::?:?:? :?:?::? ::?:?:? :a:?:?:?:?:?:w::?:?:?::?:?:?:?:a :?::?::? :? ::?:::o:?:w:1::?:?:a:?:?:?:?:w::?:?:?:?:?:? :?:-:?:: :?:?:?:?:?:?:?:?:w:-:?::?:?:- :?:? :- ::?::?:w:?:?:?:?:w::?:?:?:?:?:?:w:?::?::?:w:o::::?:?:? :?:?:: :-:?::?:?:?:- :-:?::?:?:- :? ? :?:?::w:?:?:?:?:?:?:w::?::::?:?:?:o:?:w::?:?::?:?:? :?:?:?:?:?::?:::?:w::?:?::?:?:?:w:?::?::?:w:?::?:?:?:w:?::?::?:?:?:w:1:e:w:::?:o:?::?:?:w:?:?:?:?:?::?:?:::?:? :w :?:?:?:w:? :? :?:? :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:?:w :?:::?:?:?:?:?:?:?:?: @?:?:e:?::o:?:?:w:?:?:?:o:?:::o:?:?:w:?:?:?:w:?:?:?::?:?:?:w:?:?:?::?:o:?:?::::?::o::w:::?:o:?:? 0 5 10 15 20 25 30 012345 v ds (volts) fig 1: on-region characteristics id (a) vgs=3.5v 4v 10v 5v 4.5v 0 5 10 15 20 22.533.544.5 vgs (volts) figure 2: transfer characteristics id (a) 20 30 40 50 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage rds(on) (m ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 vsd (volts) figure 6: body-diode characteristics is (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance vgs=10v id=6a vgs=4.5v id=5a 10 20 30 40 50 60 70 80 246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage rds(on) (m ) 25c 125c vds=5v vgs=4.5v vgs=10v id=6a 25c 125c
:? :?:? :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:?:w :?:::?:?:?:?:?:?:?:?: 0 2 4 6 8 10 0246810 q g (nc) figure 7: gate-charge characteristics vgs (volts) 0 200 400 600 800 0 10203040 vds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 vds (volts) id (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc tj(max.)=150c ta=25c rds(on) limited vds=20v id= 6a single pulse d=t on /t t j , pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse tj(max.)=150c ta=25c 10 s
:? :?:? :?:?:?:?:?=? :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:?:w :?:::?:?:?:?:?:?:?:?: ::|:?:?:w:? :?:? :?:? :?:? :?:? :?:? :?:?:?:w ::?:?::?:w :?:?:w :?? :?:?::w:?:?:?:?:?:?:w::?::::?:?:?:o:?:w::?:?::?:?:? :?:?:?:?:?::?:::?:w::?:?::?:?:?:w:?::?::?:w:?::?:?:?:w:?::?::?:?:?:w:1:e:w:::?:o:?::?:?:w:?:?:?:?:?::?:?:::?:? :w :?:?:?:w:? :? :?:? :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:?:w :?:::?:?:?:?:?:?:?:?: @?:?:e:?::o:?:?:w:?:?:?:o:?:::o:?:?:w:?:?:?:w:?:?:?::?:?:?:w:?:?:?::?:o:?:?::::?::o::w:::?:o:?:? 0 5 10 15 20 25 30 012345 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-3v -3.5v -4.5v -10v -4v -5v -6v 0 5 10 15 20 25 1 1.5 2 2.5 3 3.5 4 4.5 5 -v gs (volts) figure 2: transfer characteristics -i d (a) 30 35 40 45 50 55 60 0246810 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-5a v gs =-4.5v i d =-4a 20 40 60 80 100 120 140 160 2345678910 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-5a 25c 125c
:? :?:? :?:?:?:?:?:?:?:?:?:?:?::e:w::|:a:?:?:?:w :?:::?:?:?:?:?:?:?:?: 0 2 4 6 8 10 0 5 10 15 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 010203040 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max.) =150c, t a =25c v ds =-20v i d =-5a single pulse d=t on /t t j , pk =t a +p dm .z ja .r ja r ja =62.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max.) =150c t a =25c 10 s
|
